Hf-based high-k dielectrics : process development, performance characterization, and reliability /
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Author / Creator: | Kim, Young-Hee, 1972- |
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Edition: | 1st ed. |
Imprint: | San Rafael, Calif. (1537 Fourth Street, San Rafael, CA 94901 USA) : Morgan & Claypool Publishers, c2005. |
Description: | 1 electronic text (x, 92 p. : ill.) : digital file. |
Language: | English |
Series: | Synthesis lectures on solid state materials and devices, 1932-1724 ; #1 Synthesis lectures on solid state materials and devices (Online), #1. |
Subject: | |
Format: | E-Resource Book |
URL for this record: | http://pi.lib.uchicago.edu/1001/cat/bib/8512758 |
Summary: | In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru-Ta alloy, Ru) was investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. Dynamic stressing has also been used. It was found that the combination of trapping and detrapping contributed to the enhancement of the projected lifetime. The results from the polarity dependence studies showed that the substrate injection exhibited a shorter projected lifetime and worse soft breakdown behavior, compared to the gate injection. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdown may be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm). Low Weibull slope was in part attributed to the lower barrier height of HfO2 at the interface layer. Interface layer optimization was conducted in terms of mobility, swing, and short channel effect using deep submicron MOSFET devices. |
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Item Description: | Title from PDF t.p. (viewed on Oct. 27, 2008). Series from website. |
Physical Description: | 1 electronic text (x, 92 p. : ill.) : digital file. |
Format: | Mode of access: World Wide Web. System requirements: Adobe Acrobat Reader. |
Bibliography: | Includes bibliographical references (p. 86-90). |
ISBN: | 1598290045 (electronic bk.) |
ISSN: | 1932-1724 ; |
Access: | Abstract freely available; full-text restricted to subscribers or individual document purchasers. |