Hf-based high-k dielectrics : process development, performance characterization, and reliability /
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Author / Creator: | Kim, Young-Hee, 1972- |
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Edition: | 1st ed. |
Imprint: | San Rafael, Calif. (1537 Fourth Street, San Rafael, CA 94901 USA) : Morgan & Claypool Publishers, c2005. |
Description: | 1 electronic text (x, 92 p. : ill.) : digital file. |
Language: | English |
Series: | Synthesis lectures on solid state materials and devices, 1932-1724 ; #1 Synthesis lectures on solid state materials and devices (Online), #1. |
Subject: | |
Format: | E-Resource Book |
URL for this record: | http://pi.lib.uchicago.edu/1001/cat/bib/8512758 |
Table of Contents:
- 1. Introduction
- Front-End Device Technology Evolutions
- Beyond 45nm Technology
- Issues in High-k Dielectrics
- Outline
- 2. Hard and Soft Breakdown Characteristics of Ultra-thin HfO2 under Dynamic and Constant Voltage Stress
- Motivation for High-k Dielectrics
- Reliability issues of High-k Dielectrics
- Breakdown Behaviors of HfO2 under DC stress
- Dynamic Reliability of HfO2
- 3. Impact of High Temperature Forming Gas and D2 Anneal on Reliability of HfO2 Gate Dielectrics
- Previous Results
- Effect of D2 Anneal on Various Surface Preparations
- Effect of Forming Gas Temperature in terms of Reliability
- 4. Effect of Barrier Height and Nature of Bi-Layer Structure of HfO2 with Dual Metal Gate Technology
- Motivation
- Experimental
- Results and Discussion
- Conclusion
- 5. Bi-Modal Defect Generation Rate by Low Barrier Height and Its Impact on Reliability Characteristics
- Motivation
- Experimental