Inelastic light scattering of semiconductor nanostructures : fundamentals and recent advances /
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| Author / Creator: | Schuller, Christian. |
|---|---|
| Imprint: | Berlin : Springer, 2006. |
| Description: | xi, 178 p. : ill. ; 24 cm. |
| Language: | English |
| Series: | Springer tracts in modern physics ; 219 |
| Subject: | |
| Format: | Print Book |
| URL for this record: | http://pi.lib.uchicago.edu/1001/cat/bib/6109542 |
Table of Contents:
- 1. Introduction
- References
- Part I. Basic Concepts
- 2. Fundamentals of Semiconductors and Nanostructures
- 2.1. III-V Semiconductors: Crystal and Band Structure
- 2.1.1. Phenomenology
- 2.1.2. k*p Theory
- 2.2. Electrons in Three, Two, One, and Zero Dimensions
- 2.3. Layered Growth of Semiconductors: Vertical Nanostructures
- 2.3.1. Molecular-Beam Epitaxy (MBE)
- 2.4. Electronic Ground State of Vertical Nanostructures
- 2.4.1. Envelope Function Approximation (EFA)
- 2.4.2. Self-Consistent Band Structure Calculation
- 2.5. Lateral Micro- and Nanostructures
- 2.5.1. General Remarks
- 2.5.2. Lithography and Etching
- 2.5.3. Self-Assembled Quantum Dots
- 2.6. Electronic Ground State of Lateral Nanostructures
- References
- 3. Electronic Elementary Excitations
- 3.1. Single-Particle Continua
- 3.2. Electron-Density Waves: Phenomenology of Collective Charge- and Spin-Density Excitations
- 3.3. Collective Excitations: Theoretical Models
- 3.3.1. Basic Ideas of RPA and TDLDA
- 3.3.2. Application to Two-Subband System
- 3.3.3. Plasmon-LO Phonon Coupling
- References
- 4. Basic Concepts of Inelastic Light Scattering, Experiments on Quantum Wells
- 4.1. Macroscopic Approach
- 4.1.1. General Remarks
- 4.1.2. Macroscopic Point of View
- 4.1.3. Dissipation-Fluctuation Analysis
- 4.2. Microscopic Approach, Polarization Selection Rules
- 4.2.1. Two- and Three-Step Scattering Processes
- 4.2.2. Scattering Cross Section: General Considerations
- 4.2.3. Scattering by Crystal Electrons: Polarization Selection Rules
- 4.2.4. Parity Selection Rules in Nanostructures
- 4.2.5. Intrasubband Excitations, Grating Coupler-Assisted Scattering
- 4.2.6. Multiple Cyclotron Resonance Excitations in Quantum Wells
- References
- Part II. Recent Advances
- 5. Quantum Dots: Spectroscopy of Artificial Atoms
- 5.1. Introduction
- 5.2. Semiconductor Quantum Dots
- 5.2.1. Preparation of Quantum Dots
- 5.2.2. Electronic Ground State and Excitations
- 5.3. GaAs-AlGaAs Deep-Etched Quantum Dots
- 5.3.1. Parity Selection Rules in Quantum Dots
- 5.3.2. Fine Structure in Quantum Dots
- 5.3.3. The Important Role of Extreme Resonance
- 5.3.4. Calculations for Few-Electron Quantum Dots
- 5.4. InAs Self-Assembled Quantum Dots
- 5.4.1. Few-Electron Quantum-Dot Atoms
- 5.4.2. Electronic Excitations in InAs SAQD
- 5.4.3. Comparison with Exact Calculations
- References
- 6. Quantum Wires: Interacting Quantum Liquids
- 6.1. Introduction
- 6.2. Electronic Elementary Excitations in Quantum Wires
- 6.2.1. Ground State and Excitations
- 6.2.2. Experimental Spectra and Wave-Vector Dependence
- 6.3. Confined and Propagating 1D Plasmons in a Magnetic Field
- 6.3.1. Microscopic Picture for Confined Plasmons
- 6.3.2. Coupling with Bernstein Modes
- 6.4. Towards the Tomonaga-Luttinger Liquid?
- References
- 7. Tunneling-Coupled Systems
- 7.1. Introduction
- 7.2. Charge-Density Excitation Spectrum in Tunneling-Coupled Double Quantum Wells
- 7.3. Experiments on Tunable GaAs-AlGaAs Double Quantum Wells
- 7.4. Vertically-Coupled Quantum Wires
- References
- 8. Inelastic Light Scattering in Microcavities
- 8.1. Introduction
- 8.2. 2DES Inside a Semiconductor Microcavity
- 8.3. Optical Double-Resonance Experiments
- References
- Part III. Appendix
- Kronecker Products of Dipole Matrix Elements I.
- Kronecker Products of Dipole Matrix Elements II.
- Index
