InP-based materials and devices : physics and technology /
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| Imprint: | New York : Wiley, c1999. |
|---|---|
| Description: | x, 592 p. : ill. ; 25 cm. |
| Language: | English |
| Series: | Wiley series in microwave and optical engineering |
| Subject: | |
| Format: | Print Book |
| URL for this record: | http://pi.lib.uchicago.edu/1001/cat/bib/4322809 |
Table of Contents:
- Demand for InP-Based Optoelectronic Devices and Systems
- Applications of InP-Based Transistors for Microwave and Millimeter- Wave Systems
- Material Physics of InP-Based Compound Semiconductors
- InP Bulk Crystal Growth and Characterization
- Metal-Organic Chemical Vapor Deposition of InP-Based Materials
- InP and Related Compound Growth Based on MBE Technologies with Gaseous Sources
- Physics and Technological Control of Surfaces and Interfaces of InP-Based Materials
- Dry Process Technique for InP-Based Materials
- Heterostructure Field Effect Transistors and Circuit Applications
- Heterojunction Bipolar Transistors and Circuit Applications
- Lasers, Amplifiers, and Modulators Based on InP-Based Materials
- Photodiodes and Receivers Based on InP Materials
- Hybrid Integration and Packaging of InP-Based Optoelectronic Devices
- Index
