Advanced materials for future terahertz devices, circuits and systems /
Saved in:
Imprint: | Singapore : Springer, [2021] |
---|---|
Description: | 1 online resource (333 pages). |
Language: | English |
Series: | Lecture notes in electrical engineering ; volume 727 Lecture notes in electrical engineering ; v. 727. |
Subject: | |
Format: | E-Resource Book |
URL for this record: | http://pi.lib.uchicago.edu/1001/cat/bib/12610843 |
Table of Contents:
- Chapter 1. Introduction to the Advanced Materials for Future Teraheretz Devices, Circuits and Systems
- Chapter 2. Gallium Nitride Based Solid-State Devices for Terahertz Applications
- Chapter 3. Noncontact Characterization Techniques of GaN-Based Terahertz Devices
- Chapter 4. A Brief Review on Terahertz Avalanche Transit Time Sources
- Chapter 5. Terahertz IMPATT Sources Based on Silicon Carbide
- Chapter 6. Terahertz Quantum Dot Intersublevel Photodetector
- Chapter 7. Graphene A Promising Material for Realizing Active and Passive Terahertz Radiators
- Chapter 8. First-principle Molecular Dynamics Simulation of Terahertz Absorptive Hydrogenated TiO2 Nanoparticles
- Chapter 9. Doping Effects on Optical Properties of Titania Composite in Terahertz Range
- Chapter 10. Silicon Nanowires as a Potential Material for Terahertz Applications
- Chapter 11. Analysis of Optical Performance of Dual-order RAMAN Amplifier beyond 100 THz Spectrum
- Chapter 12. A Novel Approach Dual Material Double Gate Germanium based TFET
- Chapter 13. Sources and Security Issues in Terahertz Technologies
- Chapter 14. Interferometric Switch Based on Terahertz Optical Asymmetric Demultiplexer
- Chapter 15. Material Systems for Realizing Heterojunction IMPATT sources for Generating Terahertz Waves.