Advanced materials for future terahertz devices, circuits and systems /
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| Imprint: | Singapore : Springer, [2021] |
|---|---|
| Description: | 1 online resource (333 pages). |
| Language: | English |
| Series: | Lecture notes in electrical engineering ; volume 727 Lecture notes in electrical engineering ; v. 727. |
| Subject: | |
| Format: | E-Resource Book |
| URL for this record: | http://pi.lib.uchicago.edu/1001/cat/bib/12610843 |
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| 245 | 0 | 0 | |a Advanced materials for future terahertz devices, circuits and systems / |c Aritra Acharyya, Palash Das, editors. |
| 264 | 1 | |a Singapore : |b Springer, |c [2021] | |
| 300 | |a 1 online resource (333 pages). | ||
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| 490 | 1 | |a Lecture notes in electrical engineering ; |v volume 727 | |
| 520 | |a This book highlights the properties of advanced materials suitable for realizing THz devices, circuits and systems, and processing and fabrication technologies associated with those. It also discusses some measurement techniques exclusively effective for THz regime, newly explored materials and recently developed solid-state devices for efficient generation and detection of THz waves, potentiality of metamaterials for implementing THz passive circuits and bio-sensors, and finally the future of silicon as the base material of THz devices. The book especially focuses on the recent advancements and several research issues related to THz materials and devices; it also discusses theoretical, experimental, established, and validated empirical works on these topics. | ||
| 505 | 0 | |a Chapter 1. Introduction to the Advanced Materials for Future Teraheretz Devices, Circuits and Systems -- Chapter 2. Gallium Nitride Based Solid-State Devices for Terahertz Applications -- Chapter 3. Noncontact Characterization Techniques of GaN-Based Terahertz Devices -- Chapter 4. A Brief Review on Terahertz Avalanche Transit Time Sources -- Chapter 5. Terahertz IMPATT Sources Based on Silicon Carbide -- Chapter 6. Terahertz Quantum Dot Intersublevel Photodetector -- Chapter 7. Graphene A Promising Material for Realizing Active and Passive Terahertz Radiators -- Chapter 8. First-principle Molecular Dynamics Simulation of Terahertz Absorptive Hydrogenated TiO2 Nanoparticles -- Chapter 9. Doping Effects on Optical Properties of Titania Composite in Terahertz Range -- Chapter 10. Silicon Nanowires as a Potential Material for Terahertz Applications -- Chapter 11. Analysis of Optical Performance of Dual-order RAMAN Amplifier beyond 100 THz Spectrum -- Chapter 12. A Novel Approach Dual Material Double Gate Germanium based TFET -- Chapter 13. Sources and Security Issues in Terahertz Technologies -- Chapter 14. Interferometric Switch Based on Terahertz Optical Asymmetric Demultiplexer -- Chapter 15. Material Systems for Realizing Heterojunction IMPATT sources for Generating Terahertz Waves. | |
| 588 | |a Description based upon print version of record. | ||
| 650 | 0 | |a Terahertz technology. |0 http://id.loc.gov/authorities/subjects/sh2006007755 | |
| 650 | 0 | |a Terahertz technology |x Design and construction. | |
| 650 | 7 | |a Terahertz technology. |2 fast |0 (OCoLC)fst01741622 | |
| 655 | 0 | |a Electronic books. | |
| 655 | 4 | |a Electronic books. | |
| 700 | 1 | |a Acharyya, Aritra, |e editor. | |
| 700 | 1 | |a Das, Palash, |e editor. | |
| 776 | 0 | 8 | |i Print version: |a Acharyya, Aritra |t Advanced Materials for Future Terahertz Devices, Circuits and Systems |d Singapore : Springer Singapore Pte. Limited,c2021 |z 9789813344884 |
| 830 | 0 | |a Lecture notes in electrical engineering ; |v v. 727. |0 http://id.loc.gov/authorities/names/no2007099709 | |
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| 928 | |t Library of Congress classification |a TK7877 |l Online |c UC-FullText |u https://link.springer.com/10.1007/978-981-33-4489-1 |z Springer Nature |g ebooks |i 12626451 | ||