Emerging trends in terahertz solid-state physics and devices : sources, detectors, advanced materials, and light-matter interactions /

Emerging trends in terahertz solid-state physics and devices : sources, detectors, advanced materials, and light-matter interactions /

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Bibliographic Details
Imprint:Singapore : Springer, 2020.
Description:1 online resource (210 pages)
Language:English
Subject:Terahertz technology.
Terahertz technology.
Electronic books.
Format: E-Resource Book
URL for this record:http://pi.lib.uchicago.edu/1001/cat/bib/12604516
Hidden Bibliographic Details
Other authors / contributors:Biswas, Arindam.
Banerjee, Amit, 1972-
Acharyya, Aritra.
Inokawa, Hiroshi.
Roy, Jintendra Nath.
ISBN:9789811532351
9811532354
9789811532344
Notes:2 Imaging with Sensing Technique of Terahertz Utilizing III-V HEMTs
Print version record.
Summary:This book highlights recent advances and applications in terahertz (THz) technology, addressing advanced topics such as THz biomedical imaging, pattern recognition and tomographic reconstruction for THz biomedical imaging by machine learning and artificial intelligence, THz imaging radars for autonomous vehicle applications, and THz imaging systems for security and surveillance. It also discusses theoretical, experimental, established and validated empirical work on these topics.
Other form:Print version: Biswas, Arindam. Emerging Trends in Terahertz Solid-State Physics and Devices : Sources, Detectors, Advanced Materials, and Light-Matter Interactions. Singapore : Springer Singapore Pte. Limited, ©2020 9789811532344
Standard no.:10.1007/978-981-15-3
Table of Contents:
  • Intro
  • Preface
  • Contents
  • About the Editors
  • THz Bandpass Filter Design Using Metamaterial-Based Defected 1D Photonic Crystal Structure
  • 1 Introduction
  • 2 Objective
  • 3 Mathematical Formulation
  • 3.1 Transmission and Reflection Coefficients for Polarized Wave Incidence
  • 3.2 Eigenmodes for Planar Photonic Structure
  • 3.3 Transmission Coefficient
  • 4 Results and Discussions
  • 5 Conclusion
  • References
  • Terahertz Radiators Based on Silicon Carbide Avalanche Transit Time Sources-Part I: Large-Signal Characteristics
  • 1 Introduction
  • 2 Substance Parameters and Design Strategy
  • 3 NSVE Large-Signal Model
  • 4 Observations and Discussion
  • 5 Conclusion
  • References
  • Terahertz Radiators Based on Silicon Carbide Avalanche Transit Time Sources-Part II: Avalanche Noise Characteristics
  • 1 Introduction
  • 2 A Brief History
  • 3 Substance Parameters and Design Strategy
  • 4 Small-Signal Noise Model
  • 4.1 Effect of Optical Illumination
  • 4.2 Influence of Magnetic Field
  • 4.3 Effect of Reduced Impact Ionization Rate
  • 5 Noise Characterizes of 3C-SiC IMPATT Sources
  • 6 Conclusion
  • References
  • 2.2 The Cg in QWFET of Kane-Type Compounds
  • 2.3 The Cg in QWFET of II-VI Materials
  • 2.4 The barCG in QWFET of IV-VI Materials
  • 2.5 The Cg in QWFET of Stressed Materials
  • 2.6 The Cg in QWFET of GaP Material
  • 2.7 The Cg in QWFET of PtSb2 Material
  • 2.8 The Cg in QWFET of Bi2 Te3 Material
  • 2.9 The Cg in QWFET of Ge
  • 2.10 The Cg in QWFET of GaSb
  • 2.11 The Cg in QWFET of II-V Materials
  • 3 Results and Discussion
  • References
  • Heterostructure Devices for THz Signal Recognition
  • 1 Introduction

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