Emerging trends in terahertz solid-state physics and devices : sources, detectors, advanced materials, and light-matter interactions /
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| Imprint: | Singapore : Springer, 2020. |
|---|---|
| Description: | 1 online resource (210 pages) |
| Language: | English |
| Subject: | Terahertz technology. Terahertz technology. Electronic books. |
| Format: | E-Resource Book |
| URL for this record: | http://pi.lib.uchicago.edu/1001/cat/bib/12604516 |
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| 245 | 0 | 0 | |a Emerging trends in terahertz solid-state physics and devices : |b sources, detectors, advanced materials, and light-matter interactions / |c Arindam Biswas, Amit Banerjee, Aritra Acharyya, Hiroshi Inokawa, Jintendra Nath Roy, editors. |
| 260 | |a Singapore : |b Springer, |c 2020. | ||
| 300 | |a 1 online resource (210 pages) | ||
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| 338 | |a online resource |b cr |2 rdacarrier | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Intro -- Preface -- Contents -- About the Editors -- THz Bandpass Filter Design Using Metamaterial-Based Defected 1D Photonic Crystal Structure -- 1 Introduction -- 2 Objective -- 3 Mathematical Formulation -- 3.1 Transmission and Reflection Coefficients for Polarized Wave Incidence -- 3.2 Eigenmodes for Planar Photonic Structure -- 3.3 Transmission Coefficient -- 4 Results and Discussions -- 5 Conclusion -- References -- Terahertz Radiators Based on Silicon Carbide Avalanche Transit Time Sources-Part I: Large-Signal Characteristics -- 1 Introduction | |
| 505 | 8 | |a 2 Substance Parameters and Design Strategy -- 3 NSVE Large-Signal Model -- 4 Observations and Discussion -- 5 Conclusion -- References -- Terahertz Radiators Based on Silicon Carbide Avalanche Transit Time Sources-Part II: Avalanche Noise Characteristics -- 1 Introduction -- 2 A Brief History -- 3 Substance Parameters and Design Strategy -- 4 Small-Signal Noise Model -- 4.1 Effect of Optical Illumination -- 4.2 Influence of Magnetic Field -- 4.3 Effect of Reduced Impact Ionization Rate -- 5 Noise Characterizes of 3C-SiC IMPATT Sources -- 6 Conclusion -- References | |
| 505 | 8 | |a 2.2 The Cg in QWFET of Kane-Type Compounds -- 2.3 The Cg in QWFET of II-VI Materials -- 2.4 The barCG in QWFET of IV-VI Materials -- 2.5 The Cg in QWFET of Stressed Materials -- 2.6 The Cg in QWFET of GaP Material -- 2.7 The Cg in QWFET of PtSb2 Material -- 2.8 The Cg in QWFET of Bi2 Te3 Material -- 2.9 The Cg in QWFET of Ge -- 2.10 The Cg in QWFET of GaSb -- 2.11 The Cg in QWFET of II-V Materials -- 3 Results and Discussion -- References -- Heterostructure Devices for THz Signal Recognition -- 1 Introduction | |
| 500 | |a 2 Imaging with Sensing Technique of Terahertz Utilizing III-V HEMTs | ||
| 520 | |a This book highlights recent advances and applications in terahertz (THz) technology, addressing advanced topics such as THz biomedical imaging, pattern recognition and tomographic reconstruction for THz biomedical imaging by machine learning and artificial intelligence, THz imaging radars for autonomous vehicle applications, and THz imaging systems for security and surveillance. It also discusses theoretical, experimental, established and validated empirical work on these topics. | ||
| 650 | 0 | |a Terahertz technology. |0 http://id.loc.gov/authorities/subjects/sh2006007755 | |
| 650 | 7 | |a Terahertz technology. |2 fast |0 (OCoLC)fst01741622 | |
| 655 | 4 | |a Electronic books. | |
| 700 | 1 | |a Biswas, Arindam. |0 http://id.loc.gov/authorities/names/no2017138538 | |
| 700 | 1 | |a Banerjee, Amit, |d 1972- |0 http://id.loc.gov/authorities/names/no2001038658 | |
| 700 | 1 | |a Acharyya, Aritra. | |
| 700 | 1 | |a Inokawa, Hiroshi. | |
| 700 | 1 | |a Roy, Jintendra Nath. | |
| 776 | 0 | 8 | |i Print version: |a Biswas, Arindam. |t Emerging Trends in Terahertz Solid-State Physics and Devices : Sources, Detectors, Advanced Materials, and Light-Matter Interactions. |d Singapore : Springer Singapore Pte. Limited, ©2020 |z 9789811532344 |
| 856 | 4 | 0 | |u https://link.springer.com/10.1007/978-981-15-3235-1 |y Springer Nature |
| 880 | 8 | |6 505-00/(S |a References -- Analysis of InN-Based Surrounded Gate Tunnel Field-Effect Transistor for Terahertz Applications -- 1 Introduction -- 2 Device Structure and Simulatiοn -- 2.1 Different Device Models -- 2.2 Device and Electrical Parameter Analysis -- 2.3 Proposed Methodology and Simulation Framework -- 3 Results and Discussion -- 3.1 DC Characteristics -- 3.2 Small-Signal Analysis -- 4 Conclusion -- References -- On the Quantum Capacitance of Quantum Wire Field-Effect Transistors of Compound Semiconductors -- 1 Introduction -- 2 Theoretical Background -- 2.1 The Cg in QWFET of Tetragonal Materials | |
| 880 | 8 | |6 505-00/(S |a RF Performance of Ultra-wide Bandgap HEMTs -- 1 Introduction -- 2 GaN-Based HEMTs -- 2.1 GaN Power Amplifier -- 3 RF Performance of β-Ga2O3 Devices -- 4 Limits to RF and DC Performance (GaN and Ga2O3 HEMTs) -- 5 Conclusion -- References -- Potentiality of Impact Avalanche Transit Time Diode as Terahertz Source Based on Group IV and III-V Semiconducting Materials -- 1 Introduction -- 2 Numerical Method and Design Parameters -- 3 Results and Discussion -- 3.1 Avalanche Response Time Determination -- 3.2 Drift Response Time Calculation -- 3.3 Drift Capacitance and Resonant Frequency -- 4 Conclusion | |
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| 928 | |t Library of Congress classification |a TK7877 |l Online |c UC-FullText |u https://link.springer.com/10.1007/978-981-15-3235-1 |z Springer Nature |g ebooks |i 12620124 | ||