Advances in Photovoltaics. Part 3 /

This volume is the third of a set of seven on the topic of photovoltaics. Solar cell-related technologies covered here include: ribbon silicon; heterojunction crystalline silicon; wafer equivalent crystalline silicon; and other advanced silicon solar cell structures and processes. Semiconductors and...

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Bibliographic Details
Imprint:Amsterdam : Academic Press, 2014.
Description:1 online resource (x, 167 pages : illustrations).
Language:English
Series:Semiconductors and Semimetals, 0080-8784 ; Volume 90
Semiconductors and semimetals ; v. 90.
Subject:Photovoltaic power generation.
TECHNOLOGY & ENGINEERING -- Mechanical.
Photovoltaic power generation.
Electronic books.
Electronic books.
Format: E-Resource Book
URL for this record:http://pi.lib.uchicago.edu/1001/cat/bib/12378567
Hidden Bibliographic Details
Other authors / contributors:Willeke, G., 1954- editor.
Weber, Eicke R., editor.
ISBN:9780123884183
0123884187
0123884179
9780123884176
Notes:Includes bibliographical references at the end of each chapters and index.
Text in English.
Summary:This volume is the third of a set of seven on the topic of photovoltaics. Solar cell-related technologies covered here include: ribbon silicon; heterojunction crystalline silicon; wafer equivalent crystalline silicon; and other advanced silicon solar cell structures and processes. Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant v.
Other form:Print version: 9780123884176
Table of Contents:
  • Front Cover; Advances in Photovoltaics: Part 3; Copyright; Contents; Contributors; Preface; Chapter One: State-of-the-Art Industrial Crystalline Silicon Solar Cells; 1. Introduction; 1.1. History; 1.2. General routes for cost reduction; 1.3. PV market today; 1.4. Basic structure of an industrial c-Si solar cell; 2. Operation Principle of a c-Si Solar Cell; 2.1. Band diagram; 2.2. Solar cell parameters; 2.3. Fundamental efficiency limit of an ideal c-Si solar cell; 2.4. Two-diode model; 2.5. Radiative recombination; 2.6. Auger recombination; 2.7. SRH recombination; 2.8. Surface recombination.
  • 2.9. Recombination and saturation current density2.10. Optical losses; 3. The Basic Firing Through SiNx:H Process; 3.1. Wafer washing, texturization, and cleaning; 3.2. Phosphorus diffusion; 3.2.1. Phosphorus diffusion gettering of impurities; 3.3. Edge isolation; 3.4. SiNx:H deposition; 3.5. Metallization via screen-printing; 3.5.1. Front side metallization; 3.5.2. Rear side metallization; 3.5.3. Co-firing step; 3.6. Solar cell characterization; 4. Recent Developments on Solar Cell Front Side; 4.1. Wafer sawing; 4.2. Alkaline wafer texturing; 4.3. Front contact metallization.
  • 4.3.1. Double print4.3.2. Dual print; 4.3.3. Stencil printing; 4.3.4. Dispensing; 4.3.5. Paste development; 4.3.6. Seed-and-plate; 4.3.7. Multi-busbar approaches; 5. Advanced Emitter Formation; 5.1. Improvement of homogeneous emitters; 5.2. Selective emitters; 5.2.1. Doped Si inks; 5.2.2. Oxide mask process; 5.2.3. Ion implantation process; 5.2.4. Etch-back process; 5.2.5. Laser doping via P-glass; 5.2.6. Laser doping via laser chemical processing and NiAg light-induced plating; 5.2.7. Laser doping and plating; 5.2.8. Effect of encapsulation on blue response.
  • 5.2.9. Efficiency potential of selective emitters6. Industrial PERC-Type Solar Cells; 6.1. Dielectric rear side passivation; 6.1.1. Al2O3 layers; 6.1.2. Al2O3/SiNx:H stacks; 6.1.3. SiO2/SiNx:H stacks; 6.2. Formation of local rear contacts; 6.2.1. Laser fired contacts; 6.2.2. Etching paste; 6.2.3. Laser ablation; 6.2.4. Contact patterns and void formation; 6.2.5. Interconnection issues; 6.3. Boron-oxygen related degradation; 6.3.1. Strategies to deal with B-O related degradation; 6.3.2. Regeneration of B-O related defects; 6.4. State-of-the-art industrial PERC solar cells.
  • 7. Summary and OutlookAcknowledgments; References; Chapter Two: Amorphous Silicon/Crystalline Silicon Heterojunction Solar Cells; 1. Introduction; 2. Passivating c-Si Surfaces with a-Si:H; 2.1. Recombination at surfaces; 2.2. Physics of passivation; 2.3. Deposition of high-quality a-Si:H films; 2.4. Surface passivation on n- and p-type wafers; 3. From Passivated Wafers to Complete Solar Cells; 3.1. Wafer cleaning and texturing; 3.2. Electron and hole collectors: Doped a-Si:H layers; 3.3. Transparent conductive oxide layers; 3.4. Metallization; 3.5. Record cells.