Systems-level packaging for millimeter-wave transceivers /
|Author / Creator:||Božanić, Mladen, 1982- author.|
|Imprint:||Cham, Switzerland : Springer, |
|Description:||1 online resource|
|Series:||Smart sensors, measurement and instrumentation ; volume 34|
Smart sensors, measurement and instrumentation ; 34.
|Subject:||Millimeter wave communication systems.|
Gigabit communications -- Equipment and supplies.
TECHNOLOGY & ENGINEERING -- Mechanical.
Millimeter wave communication systems.
|URL for this record:||http://pi.lib.uchicago.edu/1001/cat/bib/11852243|
Table of Contents:
- Intro; Preface; Contents; About the Authors; 1 Research Impact of System-Level Packaging for Millimeter-Wave Transceivers; 1.1 Significance of Device Packaging at Millimeter-Wave Range and Systems Approach; 1.2 Research Contextualization: A Modern Communication System; 1.2.1 Transmitter; 1.2.2 Transmitting and Receiving Antennas; 1.2.3 The Receiver; 1.2.4 Example of State-of-the-Art Transceiver; 1.3 Other Considerations: Substrates, Active Devices and Passives; 1.4 Practical Research Focus: Applications of Millimeter-Wave Systems
- 1.5 Identifying Research Gaps: Packaging Techniques and Technologies1.5.1 Traditional Approach-A One-Chip Solution; 1.5.2 A Two-Chip Solution; 1.5.3 Packaging Multiple Dice; 1.5.4 The Ultimate Goal: System Optimization Through Improved Packaging; 1.5.5 The Packaging Decision; 1.6 Research Questions: Packaging for Millimeter-Wave Applications; 1.7 Contribution to the Body of Knowledge; 1.8 Content Overview; References; 2 Millimeter-Wave Research Challenges; 2.1 Wavelength Significance; 2.2 The Millimeter-Wave Part of the Spectrum; 2.3 Propagation of Millimeter Waves
- 2.4 Antennas for Millimeter-Waves2.4.1 General Antenna Theory; 2.4.2 Millimeter-Wave Antennas; 2.5 Millimeter-Wave Considerations; 2.5.1 Losses; 2.5.2 Uncertainty; 2.5.3 Feasibility of Component Values; 2.5.4 Interconnects and Component Sizing; 2.5.5 Coupling and Shielding; 2.5.6 Layout Dependency; 2.5.7 Bonding; 2.5.8 Package Leads; 2.5.9 Concluding Remarks; References; 3 Behavior of Active and Passive Devices at Millimeter-Wave Frequencies; 3.1 Solid-State Active Devices; 3.1.1 Metal-Oxide Transistors; 3.1.2 MOSFET Operation at Millimeter Wave Frequencies; 3.1.3 Bipolar Transistors
- 3.1.4 HBT Operation at Millimeter Wave Frequencies3.1.5 Noise Figure in HBTs and MOSFETs; 3.2 Transmission Lines; 3.2.1 Q-Factors of Passive Devices; 3.2.2 Introduction to Transmission Lines; 3.2.3 Types of Transmission Lines; 3.2.4 General Transmission Line; 3.2.5 The Quarter-Wave Transformer; 3.2.6 Substrate Integrated Waveguides; 3.2.7 Slow Co-planar Waveguides; 3.3 Resistors; 3.4 Capacitors; 3.4.1 Parallel-Plate Capacitors; 3.4.2 Transmission-Line Capacitors; 3.4.3 Other Capacitors; 3.5 Inductors; 3.5.1 Wound Inductors; 3.5.2 Integrated Inductors; 3.5.3 Embedded Inductors
- 3.5.4 Bond Wires3.5.5 Transmission-Line Inductors; 3.5.6 RF Chokes; 3.6 Transformers and Baluns; 3.7 Concluding Remarks; References; 4 Integrated Substrates: Millimeter-Wave Transistor Technologies; 4.1 Means for Comparison of Technologies; 4.2 CMOS Technology; 4.2.1 Important Characteristics; 4.2.2 State-of-the-Art CMOS Technologies; 4.3 High-Electron Mobility Transistor Technology; 4.3.1 Important Characteristics; 4.3.2 State-of-the-Art High-Electron Mobility Technologies; 4.4 Heterojunction Bipolar Transistor Technology; 4.4.1 Important Characteristics