Field-effect self-mixing terahertz detectors /

A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated el...

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Bibliographic Details
Author / Creator:Sun, Jiandong, author.
Imprint:Berlin : Springer, 2016.
Description:1 online resource (xviii, 126 pages) : illustrations (some color)
Language:English
Series:Springer theses
Springer theses.
Subject:Terahertz technology.
TECHNOLOGY & ENGINEERING -- Mechanical.
Terahertz technology.
Electronic books.
Electronic books.
Format: E-Resource Book
URL for this record:http://pi.lib.uchicago.edu/1001/cat/bib/11252054
Hidden Bibliographic Details
ISBN:9783662486818
3662486814
9783662486795
3662486792
Digital file characteristics:text file PDF
Notes:"Doctoral thesis accepted by Chinese Academy of Sciences, China."
Includes bibliographical references.
English.
Online resource; title from PDF title page (SpringerLink, viewed January 21, 2016).
Summary:A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques and device simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.
Other form:Print version: 3662486792 9783662486795
Standard no.:10.1007/978-3-662-48681-8