Fabrication and characterization of dilute nitride indium antimonide for long wavelength infrared applications /
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| Author / Creator: | Tram, Pham Huynh. |
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| Imprint: | Hauppauge, N.Y. : Nova Science Publishers, [2011] ©2011 |
| Description: | 1 online resource |
| Language: | English |
| Series: | Chemistry research and applications Chemistry research and applications series. |
| Subject: | |
| Format: | E-Resource Book |
| URL for this record: | http://pi.lib.uchicago.edu/1001/cat/bib/11225760 |
| Summary: | Recently, there has been increased interest in long wavelength infrared (LWIR) materials because of their applications in civilian and military imaging. Among many on-going research materials, dilute nitride indium antimonide (InSbN) has attracted great attention because of the unique characteristics of dilute nitride III-V compounds, which could complement the ubiquitous mercury cadmium telluride (HgCdTe) material in terms of performance and manufacturing. This book presents the molecular beam epitaxy (MBE) growth and characterisation of InSb and InSbN materials, based on the research work under the Compound Semiconductor and Quantum Information group, Nanyang Technological University, Singapore. |
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| Physical Description: | 1 online resource |
| Bibliography: | Includes bibliographical references and index. |
| ISBN: | 9781621009405 9781621009726 1621009726 1621009408 |